Platinum Sponsor


ALE 2015 Workshop
In conjunction with ALD 2015 (at the Portland Hilton), the AVS Plasma Science and Technology Division will be hosting a workshop on Atomic Layer Etching.The goals of the meeting are to provide research focus, report progress to-date and foster collaboration to accelerate this unique capability. Latest findings are expected from experts at major universities, semiconductor manufacturers and leading equipment suppliers.

Information
 
AVS 
Della Miller
110 Yellowstone Dr., Suite 120
Chico, CA 95973

 

Phone: 530-896-0477
Fax: 530-896-0487
E-mail: [email protected] 
Web: www.ald-avs.org

 

 

 

 

 
ALD 2015: June 28-July 1, Portland, Oregon
Call for Abstracts - Due February 16

Abstract Deadline: February 16, 2015

The conference will cover a wide range of topics including the following. Prospective authors are invited to Submit Online

 

ALD FUNDAMENTALS:

Precursors and Chemistry

  • Precursor Design, New Precursors, Recipe Development
  • Simulation, Modeling, and Theory of ALD
  • Precursor Delivery Systems

Growth and Characterization

  • In-situ Monitoring and Analysis
  • ALD Surface Chemistry and Initiation of Growth
  • Surface Preparation for ALD
  • Characterization of ALD Coatings
  • Highly Conformal ALD Processes
  • Plasma Enhanced ALD Processes
  • Electrochemical (EC) ALD Processes

Novel Materials

  • Molecular Layer Deposition
  • Organic-Inorganic Hybrid Materials
  • Atomic Layer Epitaxy and Doping
  • Magnetic Materials
  • ALD Coating of Powder

NANOSTRUCTURE SYNTHESIS AND FABRICATION:

  • Selective ALD Growth, Patterning
  • Nanotubes, Nanowires, Nanopores
  • Nanoparticles
  • Nanolaminates 2D Nanomaterials (Including Transition Metal Dichalcogenides)

ALD APPLICATIONS:

Energy

  • Catalysis and Fuel Cells
  • Solar Energy Materials
  • Batteries and Energy Storage

Applications in ULSI FEOL and BEOL

  • High-k Applications
  • Gate Electrode
  • Contact Metal
  • 3D Transistor Fabrication
  • Interconnects
  • Cu Diffusion Barriers
  • Cu Capping Technologies
  • Low-k Pore Sealing
  • Low-k Spacer

 Memory Applications

  • DRAM
  • Flash Memory
  • MRAM
  • RRAM
  • Other Non-volatile Memories

ALD FOR MANUFACTURING

  • Reactor and Equipment Design for Manufacturing
  • ALD Reactor Modeling
  • Large Format ALD
  • Spatially Controlled ALD
  • Sensing and Process Control
  • Fast ALD
  • R2R

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Abstract Formatting Guidelines

Prospective authors are invited to submit their abstracts online by
February 16, 2015, using the following formatting guidelines Submit Online

 

ALD 2015 presentations will follow an all-electronic recorded format, and electronic copies of all presentations (including oral component, and questions and answers) will be made available in the form of copy-secured DVDs. Abstracts should be should be no more than one page (8.5 inches x 11 inches), including figures, in Word or Adobe PDF (preferred) format. Abstracts should be formatted in Arial and include in the following order:

  • Title (Arial, 14 pt bold, centered, title case), followed by,
  • Presenting author and co-author affiliation, city, and country. Be sure to include the presenting author's e-mail. (Arial, 11 pt, centered)
  • Abstract body (Arial, 10 pt)

In addition, the submission website will provide instructions for uploading your abstract, please review those details prior to requesting your password. Author notifications will be sent on April 1, 2015.