Presentation Title:
Semiconductor Electromagnetic Compatibility Modeling for Power Devices and Packages
Speaker: Seungyoung Ahn, KAIST, Daejeon, South Korea
Abstract: The achievements of semiconductor technology are constantly creating new challenges in EMC. In the case of a passive semiconductor, the package of high bandwidth devices with high frequency operation requires an accurate and wide-band equivalent model for best performance with minimal size. In the case of active devices, new compound semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) transistors are developed for high power applications. These semiconductor components and devices are now breaking the bottleneck of size reduction and data rate increase. Therefore, accurate modeling of these semiconductor components considering the material characteristics from kHz to GHz is necessary for the system level EMC performance. In this lecture, the active and passive semiconductors and its modeling are discussed. Beginning with the understanding of physical characteristics of semiconductor and the mathematical model, the recent electrical equivalent circuit models at high frequency are explained. While the ultimately small size of TSV packages and low cost multi-IC modules are developed, the package structure, bias conditions, temperature, and trapped charges are the main factors determining the metal-oxide-silicon capacitance and the overall system performance. The signal integrity and power integrity analysis considering these factors are also discussed based on recent research trends. The characteristics of active devices also significantly affect the system level emission and susceptibility. The GaN high electron-mobility transistors are widely developed for high power components with smaller size and good thermal characteristics. However, the silicon-based model is inaccurate to expect the characteristics of GaN transistors. Recent research on GaN transistor modeling and the system level analysis are explained, and the validation with measurements for the equivalent circuit model of GaN is demonstrated. The future direction of semiconductor modeling and simulation technology for EMC performance in the realistic circuit design applications is proposed.
