MTT-S Volunteer Spotlight | | Prof. Changzhi Li is the new EiC of IEEE TMTT! | | |
We are pleased to announce that Prof. Changzhi Li will serve as the Editor-in-Chief of the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES from 2026-2028.
Prof. Li is with the Department of Electrical & Computer Engineering at Texas Tech University, Lubbock, TX, USA.
The full biography of Prof. Li is available here.
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| | Computational Optimization Techniques to Design RF Circuits | We present a comprehensive review of computational optimization techniques for the design of RF circuits. Important design techniques used to optimize RF circuits, such as genetic algorithms (GAs), particle swarm optimization (PSO), reinforcement learning (RL), Bayesian optimization (BO), and space mapping (SM), are discussed. The basics of the techniques, their merits, and their drawbacks are covered so that new researchers can understand the relevant theories of the techniques. A comparative analysis of design techniques is included. This article also provides insights into the present state and future directions of the optimization techniques. | | | |
| | 3-D-Millimeter Wave Integrated Circuits (3D-mmWIC) Using GaN-on-Si Dielets With Si CMOS for 5G FR2 Power Amplifiers | This work details the development of a 3-D-millimeter wave integrated circuit (3D-mmWIC) platform for the integration of highly scaled gallium nitride (GaN) dielets with Si CMOS for the fabrication of high-frequency circuits and systems. Au-free AlGaN/GaN-on-Si high-electron mobility transistors (HEMTs) with Lg=80nm are fabricated and singulated to a size of 240×410μm2 for the fabrication of the dielet front-end-of-line (FEOL). The dielets are integrated with an Intel 16 Si CMOS back-end-of-line (BEOL) using a solder-free, direct Cu–Cu thermocompression bonding (TCB) process. The developed process is used for the demonstration of several power amplifiers (PAs) targeting the fifth-generation (5G) new radio (NR) frequency range 2 (FR2) bands. Large signal characterization is completed with testing under 64, 256, and 1024-quadrature amplitude modulation (QAM) schemes. | | | |
| | An 8.3–43 GHz CMOS Low-Noise Amplifier With Wideband Input Matching | An 8.3-43GHz CMOS low-noise amplifier (LNA) with wideband input matching is presented. A gate–drain transformer feedback combined with a series–shunt resonance network is employed in a complementary common-source (CCS) input stage to achieve a broadband, impedance-stable input, and noise matching. A transformer-loaded cascode output stage is implemented to enhance gain, while a pole-tuning technique is adopted to achieve a broadband gain response. Fabricated in 65nm CMOS, the LNA achieves a peak gain of 14.7dB and a 3dB bandwidth from 8.3 to 43GHz with a fractional bandwidth of 135.3%. Good input matching is maintained across 8-55GHz. The input 1dB compression point (IP1dB) ranges from -14.3 to -9.3dBm. A minimum noise figure (NF) of 3.47dB is measured, and the power consumption is 25.9mW under a 1.2V supply. | | | |
| | Design of a Wideband and High Isolation Millimeter-Wave GaN Monolithic Integrated Switch Using Bandpass Matching Network | This work presents a novel bandpass matching network (BMN) based switch design methodology. Theoretical analysis shows that, compared to conventional low-pass matching network (LMN) based designs, the proposed approach enables the upward shift of the operating band while maintaining impedance matching and enhancing isolation. This makes the method particularly suitable for realizing wideband, high-frequency switches with high isolation in semiconductor technologies with limited transition frequency (fT). To validate the concept, a seventh-order single-pole single-throw (SPST) switch was designed and fabricated using a 0.15μm GaN-on-SiC process with a nominal fT of 35GHz. Measurement results show that the proposed switch achieves an insertion loss below 2dB and isolation greater than 33dB across the 15-40GHz band. Moreover, the design demonstrates excellent linearity, with a measured third-order input intercept power of 49-52dBm. | | | | MTT-S News and Announcements | | |
IMS2026 is excited to announce a joint RFSA/RFTT Late Breaking News paper submission for 2026!
Showcase your latest groundbreaking research and results at the most prestigious symposium in the field of RF and microwave engineering!
View the Call for Papers
Key Dates:
- Submission Site Opens: 2 April 2026
- Submission Deadline: 9 April 2026, 23:59 Hawaii Time
- Notification of Acceptance: 20 April 2026
- Copyright Form and Slide Submission Deadline: 1 May 2026
Due to the tight timeline and turnaround times required, the papers must be submitted camera ready, unblinded, and changes to the manuscript after review will not be accepted
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The IEEE Microwave Theory and Technology (MTT) Society annually recognizes distinguished individuals or teams for their meritorious achievements and/or outstanding technical contributions in the field of microwave theory and technology.
The deadline for nominations for the 2026 MTT-Society Awards is July 31, 2026.
Nomination forms can be downloaded from the individual awards‘ descriptions presented at https://mtt.org/award-nominations/, where further general and specific information is given, and shall be submitted to mttawardschair@ieee.org.
Robert Weigel (r.weigel@ieee.org) is the MTT-S Awards Committee Chair and is with the Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany.
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The 2026 IEEE International MTT Symposia (IMS2026) is the most prestigious symposium in the field of RF and microwave engineering.
Don’t miss your chance to take advantage of the numerous opportunities available for students including Student Ambassadors, Student Design Competitions, PhD Student Sponsorship Initiative and Project Connect!
Visit https://ims-ieee.org/students to learn more and apply!
| | The annual IEEE Wireless and Microwave Technology Conference (WAMICON 2026) plans an engaging program in Clearwater, Florida in April 2026. 2026 marks the 27th year anniversary of WAMICON which addresses multidisciplinary research and technology trends in RF, Microwaves, and Wireless Communications. The program includes both oral and poster presentations as well as workshops, tutorials and special sessions. WAMICON 2026 will be highlighting “Intelligent Heterogeneous Radio Hardware and Emerging Devices for Next-G Wireless and Beyond”. WAMICON will also host a generous number of sponsors and exhibitors bringing the latest state-of-the-art products and capabilities to display. |
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The International Conference on Microwave Acoustics & Mechanics (IC-MAM) represents a unique and unprecedented opportunity to bring together researchers and practitioners of different background (materials scientists, physicists, microwave engineers and process technologists), to share the most recent advances in new materials and manufacturing processes as well as components and devices, which represent the key for the development of future RF, microwave, mm-wave and THz devices, circuits and systems based on RF-MEMS and Acoustics. IC-MAM is organized by the IEEE Microwave Theory and Technoloy Society (MTT-S). The conference features an exciting technical program and invited talks by worldwide recognized experts of RF-MEMS and BAW/SAW technologies.
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Editor-in-Chief
Joel Arzola
Raytheon
Managing Editor
Amanda Scacchitti
The Albero Agency, Inc
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