| | New RIGOL Real-Time Spectrum Analyzer to 26.5 GHz | RIGOL is launching its highest performance Real-Time Spectrum Analyzer ever, the RSA6000 Series - with a frequency range up to 26.5 GHz, 200 MHz real-time bandwidth and 4 THz/s sweep speed! Buy online now! | | | | MTT-S Volunteer Spotlight | | IEEE MTT-S SCV/SF Joint Section Chapter: Connecting the RF Community, From Students to Experts, in the Heart of Silicon Valley | | |
IEEE MTT-S Santa Clara Valley/San Francisco (SCV/SF) Joint Section Chapter is the first to be featured from Region 6 in Microwave Magazine!
The IEEE Microwave Theory and Technology Society (MTT-S) Santa Clara Valley/San Francisco (SCV/SF) Joint Section Chapter is the MTT-S branch in the San Francisco Bay Area, CA, USA. The MTT-S SCV/SF Joint Section Chapter promotes the advancement of microwave theory, technology, and its applications, as well as the dissemination of knowledge and expertise in RF. The members range from students and early-career professionals to subject matter experts.
Read the full text on IEEEXplore and learn more about the workshops, activities, and events organized by this highly dynamic Joint Section Chapter in the heart of Silicon Valley:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11329085
– MTT-S MGA & MM Featured Chapters Coordinator
| Do you have a friend or colleague who is doing great things as an MTT-S Volunteer? Nominate them to be featured in the e-newsletter volunteer spotlight! Click the button below: | |
| | Real-Time NVNA for the Acquisition of Time-Evolving IV Characteristics of GaN HEMTs During Trapping | Gallium nitride high electron mobility transistors (GaN HEMTs) are a well-studied technology by now, decades on from their debut. The development of GaN HEMTs has been spurred on by the excellent electron mobility that results from the two-dimensional electron gas at the AlGaN/GaN heterojunction, as well as the high electric field at which GaN breaks down. Fast switching and high-power operation made GaN HEMTs an obvious choice as the active component for the next generation of RF power amplifiers (PAs). | | | |
| | A Temperature-Dependent Nonlinear Model for GaN HEMTs | In this letter, an improved temperature-dependent model for GaN HEMTs based on the EEHEMT model is developed. To precisely capture the temperature-dependent characteristics of GaN HEMTs, several parameters of the original EEHEMT model are modified, and appropriate functional relationships between these parameters and ambient temperature are established. To validate the accuracy of the proposed model, the dc and RF characteristics of a GaN HEMT with a gate width of 2×25μm are measured at -40C, 0C, 40C, 80C, and 120C. Comparisons between the simulation data and measurement results demonstrate that the improved model can accurately reflect the trends in characteristics of the GaN HEMTs across the evaluated ambient temperature range. | | | |
| | A 320-GHz Scalable Equivalent-Circuit Model With Dispersive NQS Effect for CMOS Transistors: From Theory to Experimental Validation | In this article, a scalable subterahertz equivalent circuit model for CMOS transistors is proposed. At subterahertz frequencies, signal propagation exhibits extremely rapid dynamics, causing the nonquasi-static (NQS) effect to become pronounced. To address this challenge, a dispersive nonlinear resistance model based on carrier transport mechanisms was developed. This model integrated both carrier drift and diffusion effects, and further characterized the frequency dispersion phenomena associated with the NQS effect. For model validation, 12 CMOS transistors with varying geometries were designed and fabricated in a partially depleted silicon-on-insulator (PDSOI) process. Subsequently, ultrawideband scattering parameter measurements were performed on these devices across the frequency range from 0.2 to 320 GHz. | | | |
| | Low-DC-Power, Low-Phase-Noise W-Band Differential Fundamental Oscillators and G-Band Push–Push Oscillators With Mesa Engineering in 70-nm GaAs pHEMT Technology | This article presents a family of W- and G-band VCOs implemented in a state-of-the-art 70-nm GaAs pHEMT technology with a peak fT/ fmax of 160/360 GHz. The W-band differential VCO achieves a phase noise and a differential output power of −115.2 dBc/Hz and −3 dBm at 94 GHz, respectively, while consuming 74.5 mW. A family of Gband push–push oscillators with direct second-harmonic extraction is developed based on the W-band VCO core. At 199.8 GHz, the push–push oscillator delivers a phase noise of −103.7 dBc/Hz and an output power of −12.2 dBm while consuming 54.6 mW. To further extend the frequency of operation, mesa scaling is applied at the device level to selected VCOs for performance validation. This frequency enhancement technique achieves a 7.2% increase in oscillation frequency for the mesa-engineered G-band oscillators without additional dc power consumption. | | | | MTT-S News and Announcements | | Call for Logo Design: IEEE MTT-S 75th Anniversary Celebration | |
The IEEE Microwave Theory and Technology Society (MTT-S) is excited to launch a Logo Design Contest in celebration of our 75th Anniversary in 2027!
We invite all creative minds in our community to help define the visual identity of this historic milestone. Whether you are an experienced designer or a passionate enthusiast, this is your opportunity to make a lasting contribution to the MTT-S legacy.
Awards:
- First Prize: $1,000 USD; special recognition and award certificate
- Second Prize: $500 USD, special recognition and award certificate
- Third Prize: $250 USD, special recognition and award certificate
Click here to review contest rules, branding
guidelines and to submit your design
Submission Deadline:
January 31, 2026
| | Establishing Identity, Community and Impact | | |
Our January 2026 column offers a very special retrospective look at the past 2 years, offered by our WiM Committee Chair Prof. Amelie Hagelauer!
“Since January 2024, I have had the honor of serving as the chair of the Women in Microwaves (WiM) Committee. Over the past months, thanks to the dedication and enthusiasm of our outstanding committee members, we have achieved several important milestones that strengthen our committee’s mission of promoting and increasing the visibility of women in the field of microwaves. I’m pleased to share some highlights of our recent activities.”
Read more about the insights and highlights of accomplishments from the design of our own logo, social media presence on LinkedIn with regular updates on professional events, announcements, and community building, overview of WiM events and panel sessions in flagship MTT-S conferences and local events, and a refreshed and up-to-date WiM website. Read her full article in Microwave Magazine here:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11329104
– WiM Media Working Group 2026
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The IEEE Microwave Theory and Technology (MTT) Society annually recognizes distinguished individuals or teams for their meritorious achievements and/or outstanding technical contributions in the field of microwave theory and technology.
The deadline for nominations for the 2026 MTT-Society Awards is July 31, 2026.
Nomination forms can be downloaded from the individual awards‘ descriptions presented at https://mtt.org/award-nominations/, where further general and specific information is given, and shall be submitted to mttawardschair@ieee.org.
Robert Weigel (r.weigel@ieee.org) is the MTT-S Awards Committee Chair and is with the Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany.
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The International Conference on Medical Microwave Imaging Applications (ICMWIA) aims to bring together experts in the Medical Microwave Imaging (MMWI) field and will include invited talks, presentations and posters of peer-reviewed abstracts and conference papers, and workshops in satellite areas of research that are of interest to MMWI research.
This conference is being organised under the project 3BAtwin, funded by the European Union.
The main topics of the conference are: dielectric characterization of biological tissues; microwave imaging; tissue mimicking materials; phantom development; antenna development.
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IMFW 2026 marks the third episode of the conference dedicated to the filter community, succeeding IMFW 2021 in Perugia, Italy and IMFW 2024 held in Cocoa Beach, FL, USA, all organized by the IEEE Microwave Theory and Technology Society (MTT-S). The conference aims to maintain a global presence by rotating across various continents. With its specialized focus and strategic location, IMFW 2026 offers a prime platform for the filter community to convene regularly, catering to the broader microwave community with a keen interest in various topics in microwave filters, especially those who are unable to participate in major microwave conferences.
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Editor-in-Chief
Joel Arzola
Raytheon
Managing Editor
Amanda Scacchitti
The Albero Agency, Inc
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