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JVST A Recent Open Access Articles
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Planar regions of GaAs (001) prepared by Ga
droplet motion
Changxi Zheng, Wen-Xin Tang and David E. Jesson
J. Vac. Sci. Technol. A 34, 043201 (2016) |
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Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation
Felix Predan, Dirk Reinwand, Romain Cariou, Markus Niemeyer and Frank Dimroth
J. Vac. Sci. Technol. A 34, 031103 (2016) |
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Composition and surface deformation variance in highly strained InxGa1−xSb structures on (100) GaSb
Connor Wolenski, Weinan Zhang, Charles Meyer, Gregory Triplett and Nicholas Cole
J. Vac. Sci. Technol. A 34, 021403 (2016) |
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Erosion behavior of composite Al-Cr cathodes in cathodic arc plasmas in inert and reactive atmospheres
Robert Franz, Francisca Mendez Martin, Gerhard Hawranek and Peter Polcik
J. Vac. Sci. Technol. A 34, 021304 (2016) |
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Stoichiometry and thickness dependence of superconducting properties of niobium nitride
thin films
Melissa R. Beebe, Douglas B. Beringer, Matthew C. Burton, Kaida Yang and R. Alejandra Lukaszew
J. Vac. Sci. Technol. A 34, 021510 (2016) |
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Impact of extreme electrical fields on charge density distributions in Al3Sc alloy
Claudia Loyola, Joaquin Peralta, Scott R. Broderick and Krishna Rajan
J. Vac. Sci. Technol. A 34, 061404 (2016) |
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Thermal outgassing rates of low-carbon steels
Chongdo Park, Taekyun Ha and Boklae Cho
J. Vac. Sci. Technol. A 34, 021601 (2016) |
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Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
J Provine, Peter Schindler, Jan Torgersen, Hyo Jin Kim,
Hans-Peter Karnthaler and Fritz B. Prinz
J. Vac. Sci. Technol. A 34, 01A138 (2016) |
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