Announcing the latest additions to Qorvo's innovative RF and power portfolio of GaN on SiC transistors, power management ICs, and amplifiers which serve a wide range of radar, electronic warfare, DOCSIS 4.0, CATV, satellite, IoT, computer vision, SSD, and communications systems. These high-performance solutions simplify RF for designers worldwide and are available at Qorvo's authorized channel partners.
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Advanced COT PMIC, 4 Bucks, 2 LDOs, Load Bypass Switches & 3-State GPIOs |
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ACT88420 Features
- 2.7V ~ 5.5V input voltage range
- Bucks work with 0.47uH inductors
- LDO1: 400mA LDO or 1A load switch
- LDO2: 400mA LDO or 400mA load switch
Additional information:
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- 12C serial interface for monitoring and control
- 8 configurable GPIOs, 4 are 3-state GPIOs
- 2.66x2.66mm WLCSP package
- Ideal for SSD, IoT & computer vision
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Programmable RFPoL (Point of Load) Step-Down Voltage Regulator |
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ACT41000 Features
- 4.5-40V input voltage range
- Main buck: Adj output 3-24V at 4A
- Aux LDO: Adj output 0.9-4.05V at 20mA
- 5V Reg: 5V at 350mA
Additional information:
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- I2C serial interface for monitoring and control
- 5x5mm QFN package
- Ideal for radar, EW & satellite communications
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13.75-14.5GHz 55W GaN Power Amplifier Die on Tab |
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QPA1314T Features
- Frequency: 13.75-14.5GHz
- 20W linear power at 25dBc IMD3
- Small signal gain: 29dB
Additional information:
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- PAE: 35%
- 4.98x6.91mm die on tab
- Ideal for satellite communications
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CATV Power Doubler Hybrid 45-1218MHz, 25dB Gain |
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QPA3246 Features
- High gain: 25dB at 1218MHz
- Variable current control
- BW: 47-1218MHz
- MER 49dB at 74dBmV TCP
Additional information:
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- Excellent composite distortion
- SOT-115J package
- Ideal for DOCSIS 3.1 & DOCSIS 4.0 equipment
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75 Ohm, 15dB CATV Amplifier 50-1800MHz |
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QPL1822 Features
- 50-1800MHz operation
- 5V and 8V operation
- Noise figure: 1.6/3.5dB at 50/1800MHz
- Adjustable bias using external resistors
Additional information:
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- Gain: 15dB typical
- 5x5mm MCM package
- Ideal for DOCSIS 4.0 CATV equipment
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200W, DC-4GHz, GaN on SiC RF Transistor |
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TGF2819-FL Features
- 257W P3dB at 3GHz, load pull
- 68% PAE at 3GHz, load pull
- 50V bias voltage
Additional information:
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- CW and pulse capable
- NI-360 package
- Ideal for radar, jammers & radio communications
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100W, DC-3.5GHz, GaN on SiC RF Transistor |
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TGF2929-FL Features
- 107W P3dB at 3.5GHz, load pull
- 50% PAE3dB at 3GHz, load pull
- 28V bias voltage
Additional information:
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- CW and pulse capable
- NI-360 package
- Ideal for radar, jammers & communications systems
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7W, DC-25GHz, GaN on SiC RF HEMT Die |
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TGF2933 Features
- 7.2W P3dB at 10GHz, load pull
- 57% PAE3dB at 10GHz, load pull
- 28V bias voltage
Additional information:
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- Compact GaN HEMT die
- CW and pulse capable
- 0.833x0.551x0.1mm die
- Ideal for radar & defense communications
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ActiveCiPS: Configurable Intelligent Power Management Solutions |
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Learn about the system-wide benefits of configurable power management and the programmable features of the ActiveCiPS intelligent power management solutions in this Chalk Talk from EE Journal.
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A Brighter RF Future for GaN and STARRY NITE |
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The U.S. Department of Defense continues to build its technology leadership, with high-performing GaN and mmWave capabilities. The DoD recently awarded Qorvo with funding to develop 90nm GaN — a move that will push innovations in both the defense and commercial industries. Read more about the award and why Qorvo was selected for this effort.
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Top UnitedSiC Blog Posts: Help with Power Design Challenges |
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The acquisition of UnitedSiC has extended Qorvo’s reach into the fast-growing markets for electric vehicles (EVs), industrial power, circuit protection, renewables and data center power. This collection of blogs provides a deep dive into a comprehensive understanding of silicon carbide (SiC) power semiconductors and design techniques.
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