III-Nitride Vertical Hot Electron Transistor With Polarization Doping And Collimated Injection
Researchers have achieved a breakthrough in III-nitride-based hot electron transistor (HET) technology, delivering record performance with a collector current density over 440 kA/cm² and a current gain exceeding 75. Through advanced polarization engineering and precise fabrication techniques, these innovations position GaN-based HETs as strong contenders for next-generation high-frequency and high-power applications like mm-wave and terahertz systems.
Article tracking
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