Products for RF & uWave Amplifier Design
January, 2019
Greetings!

I would like to take this opportunity to update you regarding the discrete GaN devices that Qorvo has to offer for RF & Microwave Power Amplifier Applications , a blog series looking at the importance of GaN HEMT nonlinear models for rapid power amplifier (PA) design success, and an Application note on GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates.

We are cognizant of your inbox, so effort has been made to focus our communications on synergistic products to efficiently aide your designs.

Any interest or request for additional information please contact me.

Sincerely,

Jim
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Qorvo Design Hub: Blog
Three parts of an ongoing series looking at the importance of GaN HEMT nonlinear models for rapid power amplifier (PA) design success.

GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
This Application note explains how Qorvo calculates junction-to-case thermal resistance for product datasheets and also provides a method for estimating device life given the maximum operating temperature.

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Qorvo High Power GaN Discrete Transistors: Product Selection Guide
A list of Qorvo's portfolio of GaN Power Discretes, which includes 15 new devices, and links to the product pages on Qorvo's website for ease of reference.

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