|
APPLICATIONS:
Fluorine Etch Processes (SF6, CF4, CHF3, O2): Carbon, Si, Epoxy, SiO2, InSb, Si3N4, Ir, SiC, Mo, Ta, Nb, TaN, OxyNitride, TiW, Polyimide, TiN, Pr (examples: SiLK or SU8), W, Quartz.
OPTIONS INCLUDE:
- Electrostatic chuck (E-chuck) to more effectively keep the wafer cool during the etch process, using a helium pressure controller to build up a cooling layer of helium on the backside of the wafer.
- Inductively coupled plasma (ICP) to create higher-density plasma, thereby increasing etch rates and anisotropy.
|