Call for Abstracts
Call for Abstracts Deadline:
April 1, 2022
The 5th U.S. Gallium Oxide Workshop (GOX 2022) will be held in the Washington, D.C. area on August 7-10, 2022, to highlight domestic research in the rapidly emerging field of Ga2O3 and related materials with high critical field strength. The purpose of this workshop is to provide a premier platform for reporting recent advances in materials and device development and identify scientific gaps remaining. The intent is to create actionable coordination across government, industry and academia to enable rapid transitional technologies in this field. There will be no written proceedings in order to facilitate a friendly and stimulating environment for scientific discussions among participants from domestic and international Ga2O3 research groups. Attendees can expect topics including, but not limited to: bulk and epitaxial growth, theory/modeling/simulations, device and circuit advancements, materials characterization and novel properties, and heterostructures.
Topics:
This Workshop will focus on recent materials and device advancements across a wide range of topics including:

  • Theory, Modeling and Simulation
  • Bulk Growth
  • Epitaxial Growth
  • Electronic Transport and Breakdown Phenomena
  • Dielectric Interfaces
  • Advanced Characterization Techniques
  • Electronic and Photonic Devices, Circuits and Applications
  • Material and Device Processing and Fabrication Techniques
  • Heterogeneous Material Integration
Plenary Speakers:
  • Siddharth Rajan (The Ohio State University, USA), “Gallium Oxide Electronics – Device Engineering Toward Ultimate Material Limits”
  • Huili Grace Xing (Cornell University, USA), “Fundamental Limits of Ga2O3 Power Devices and How to Get There”

Keynote Speaker:
  • Masataka Higashiwaki (NICT Japan, Japan), “Development of Vertical and Lateral Ga2O3 FETs for Power Switching and High-Frequency Applications”

Invited Speakers:
  • Sukwon Choi (The Penn State University, USA), "Thermal Design and Management of Gallium Oxide Electronics"
  • Jinwoo Hwang (The Ohio State University, USA), “Formation and Evolution of Point Defects and their Complexes in Gallium Oxide”
  • Xiuling Li (University of Illinois Urbana-Champaign, USA), “High Aspect Ratio Ga2O3-based Homo and Heterostructures by Metal-assisted Chemical Etching”
  • Adam Neal (Air Force Research Laboratory, USA), “Transport, Doping, and Defects in β-Ga2O3″
  • Hartwin Peelaers (University of Kansas, USA), “First-Principles Modeling of Ga2O3“
  • Steve Ringel, The Ohio State University, USA, "Characterization of Deep Level Defects in β-Ga2O3 Grown by Multiple Methods"
  • Jim Speck (University of California, Santa Barbara, USA), “Progress in Gallium Oxide Materials”
  • Kevin Stevens (Northrop Grumman Synoptics, USA), “Ga2O3 Crystal Growth by the Czochralski Method”
  • Joachim Wuerfl (Ferdinand-Braun-Institut, Germany), “Towards Lateral and Vertical Ga2O3 Transistors for High Voltage Power Switching”
  • Hongping Zhao (The Ohio State University, USA), “MOCVD Growth of GaO and AlGaO”

Key Deadlines:
Call for Abstracts Deadline:
April 1, 2022
Author Acceptance Notifications: May 12, 2022
Early Registration Deadline:
June 30, 2022
Hotel Reservation Deadline:
July 21, 2022
Program Chair:
Kelson Chabak
Air Force Research
Laboratory, USA
Questions? Contact della@avs.org