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This article reviews vacuum electronic device (VED) and high power solid state phased array radar transmitter technology for space-domain awareness (SDA) applications to detect and track satellites and millions of potentially hazardous space objects. Advanced VEDs including gyrotron amplifiers in the W-band are capable of as much as 160 kW peak power. Solid state technology currently enable amplifiers capable of 1 kW in the X-band and 30 kW in the C band, and advances in power combiner technology promise a potential 5-fold increase in output power in the X-band. MMICs are finding use in SDA applications at 92 to 100 GHz. Advances in solid state phased array radar for SDA applications is advancing rapidly.

This paper presents an ultra-wide bandwidth circularly polarized implantable antenna for wireless biological telemetry systems. The effective axial ratio bandwidth of this antenna covers the 2.4 GHz industrial, scientific, and medical frequency band and the 1.9 GHz mid-field band. Its size is 0.028λ0×0.057λ0×0.004λ0. Miniaturization is achieved by adding rectangular slots to the radiation patch to form a symmetrical rectangular meandering structure, and introducing shorting probes.The study confirmed that this antenna can maintain stable performance at different implantation environments.

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An inverse design method for broadband power amplifiers (PAs) is presented in this article that does not rely on the designer’s expertise and can directly synthesize the optimal layout of the output matching network (OMN). A highly randomized patterned microstrip (PM) is employed as the OMN, which can significantly expand the design space. A high-speed electromagnetic (EM) simulator is implemented through deep learning (DL) to accomplish highly accurate prediction of S-parameters. Based on the fast responsiveness of DL, two inverse design methods are proposed. As a verification of the method, a 6–18 GHz PA is designed and fabricated in a 0.25- μ m gallium nitride (GaN) technology.

This letter reports the design, fabrication, and measurement of a high-input-power-survivability V-band GaN monolithic microwave integrated circuit (MMIC) LNA with an average measured noise figure of 2.08 dB in the 55–65-GHz range and a measured noise figure (NF) of 1.97 dB at 65 GHz. The 40-nm-gate-length GaN-on-SiC MMIC process used enables a record low noise figure for high-frequency GaN technology and a high-input-power survivability, ≥27 dBm, not possible on traditional high-performance GaAs and InP MMIC processes. This is a state-of-the-art result in terms of both lowest noise figure and highest survivability for millimeter-wave GaN MMIC LNA.