CVD Equipment Corporation’s PVT200™ Physical Vapor Transport systems have been specifically developed using our proprietary equipment technology with the goal of increasing performance and controls for large-scale manufacturing.

The PVT200™ provides exceptional process parameter control, repeatability and system to system matching for growing 200 mm diameter SiC boules. For physical vapor transport, temperatures up to 2,500 °C at +/- 0.5 °C are achieved for the sublimation of polycrystalline SiC source material and SiC crystal growth. CVD Equipment’s PVT systems offer this exceptional temperature control in both steady state and ramp conditions. It is our reactor design and control system architecture that allows for this precise control of thermal gradients for optimal SiC boule growth. Our systems demonstrate run-to-run repeatability and system matching when operated in different process conditions with over 200 I/O parameters monitored every second. With systems in the field for over a decade demonstrating high yield crystal growth, CVD Equipment’s high-performance PVT systems support global production targets and demand for SiC boules.